Top-Gated Indium–Zinc–Oxide Thin-Film Transistors With In Situ Al2O3/HfO2 Gate Oxide

Published 2014 View Full Article

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Title
Top-Gated Indium–Zinc–Oxide Thin-Film Transistors With In Situ Al2O3/HfO2 Gate Oxide
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 35, Issue 12, Pages 1251-1253
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2014-10-16
DOI
10.1109/led.2014.2360922

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