Journal
IEEE ELECTRON DEVICE LETTERS
Volume 35, Issue 6, Pages 645-647Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2014.2317943
Keywords
RTA; self-aligned; IGZO; TFT
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Funding
- NSC [101-2628-E-009-011-MY3]
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In this letter, high-performance, highly transparent amorphous InGaZnO (IGZO) thin-film transistors (TFTs) with IGZO source/drain electrodes were fabricated. Rapid thermal annealing treatment effectively converted IGZO from a semiconductor into a conductor. Using a patterned SiO2 capping layer, highly transparent IGZO-TFTs with selectively formed IGZO electrodes were fabricated on a glass substrate. The mobility of the fabricated IGZO-TFT was 8.3 cm(2)/V s, ON/OFF ratio was 3.1 x 10(6), and subthreshold swing was 0.44 V/decade. Thus, the proposed scheme provides a simple and practical method of fabricating high-performance, highly transparent IGZO TFTs.
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