Journal
IEEE ELECTRON DEVICE LETTERS
Volume 34, Issue 10, Pages 1277-1279Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2013.2277574
Keywords
Microwave photonics; optoelectronic devices; submillimeter wave generation; terahertz devices
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Funding
- French Government through the Agence Nationale de la Recherche
- Nord Pas de Calais Region
- European Commission
- Marie-Curie initial training network MITEPHO [238393]
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It is shown that a continuous wave output power reaching 1.8 mW at 252 GHz is generated by photomixing in a low-temperature-grown GaAs photoconductor using a metallic mirror-based Fabry-Perot cavity. To the best of our knowledge, it is the highest power ever reported for a single photomixer in the J-band.
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