AlGaN/GaN HEMTs on Silicon Substrate With 206-GHz $F_{ \rm MAX}$

Published 2012 View Full Article

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Title
AlGaN/GaN HEMTs on Silicon Substrate With 206-GHz $F_{ \rm MAX}$
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 34, Issue 1, Pages 36-38
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2012-12-04
DOI
10.1109/led.2012.2224313

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