Low Leakage Current and High-Cutoff Frequency AlGaN/GaN MOSHEMT Using Submicrometer-Footprint Thermal Oxidized TiO2/NiO as Gate Dielectric

Published 2013 View Full Article

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Title
Low Leakage Current and High-Cutoff Frequency AlGaN/GaN MOSHEMT Using Submicrometer-Footprint Thermal Oxidized TiO2/NiO as Gate Dielectric
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 34, Issue 6, Pages 738-740
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2013-05-04
DOI
10.1109/led.2013.2256102

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