Diode-MTJ Crossbar Memory Cell Using Voltage-Induced Unipolar Switching for High-Density MRAM

Published 2013 View Full Article

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Title
Diode-MTJ Crossbar Memory Cell Using Voltage-Induced Unipolar Switching for High-Density MRAM
Authors
Keywords
-
Journal
IEEE ELECTRON DEVICE LETTERS
Volume 34, Issue 6, Pages 753-755
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2013-05-04
DOI
10.1109/led.2013.2255096

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