Top-Gate GaN Thin-Film Transistors Based on AlN/GaN Heterostructures

Published 2012 View Full Article

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Title
Top-Gate GaN Thin-Film Transistors Based on AlN/GaN Heterostructures
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 33, Issue 9, Pages 1282-1284
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2012-08-11
DOI
10.1109/led.2012.2206555
References
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