A Two-Mask Process for Fabrication of Bottom-Gate IGZO-Based TFTs

Published 2012 View Full Article

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Title
A Two-Mask Process for Fabrication of Bottom-Gate IGZO-Based TFTs
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 33, Issue 4, Pages 543-545
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2012-02-25
DOI
10.1109/led.2012.2182986
References
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