Journal
IEEE ELECTRON DEVICE LETTERS
Volume 33, Issue 4, Pages 501-503Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2012.2185919
Keywords
High-mobility channel; III-V semiconductor materials; MOSFETs; semiconductor-metal interfaces
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Funding
- Engineering and Physical Sciences Research Council [EP/F002610/1] Funding Source: researchfish
- EPSRC [EP/F002610/1] Funding Source: UKRI
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We report an ultrashallow metallic source/drain (S/D) contact scheme for fully self-aligned III-V NMOS with specific contact resistivity and sheet resistance which, for the first time, demonstrate performance metrics that may be compatible with the ITRS R-ext requirements for 12-nm technology generation device pitch. The record specific contact resistivity between the contact pad and metallic S/D of rho(c) = 2.7 . 10(-9) Omega . cm(2) has been demonstrated for 10 nm undoped InAs channels by forming an ultrashallow crystalline ternary NiInAs phase with R-sh = 97 Omega/sq for a junction depth of 7 nm. The junction depth of the S/D scheme is highly controllable and atomically abrupt.
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