Performance of AlGaSb/InAs TFETs With Gate Electric Field and Tunneling Direction Aligned

Title
Performance of AlGaSb/InAs TFETs With Gate Electric Field and Tunneling Direction Aligned
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 33, Issue 5, Pages 655-657
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2012-02-23
DOI
10.1109/led.2012.2186554

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