High-Performance Amorphous Indium–Gallium–Zinc–Oxide Thin-Film Transistor With a Self-Aligned Etch Stopper Patterned by Back-Side UV Exposure

Published 2011 View Full Article

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Title
High-Performance Amorphous Indium–Gallium–Zinc–Oxide Thin-Film Transistor With a Self-Aligned Etch Stopper Patterned by Back-Side UV Exposure
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 32, Issue 6, Pages 758-760
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2011-04-26
DOI
10.1109/led.2011.2122330
References
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