Journal
IEEE ELECTRON DEVICE LETTERS
Volume 32, Issue 7, Pages 952-954Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2011.2144952
Keywords
Ge(2)Sb(2)Te(5) (GST); microthermal stage (MTS); phase-change memory (PCM); thermal conductivity
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Funding
- Intel Corporation
- Semiconductor Research Corporation [2009-VJ-1996]
- National Science Foundation [CBET-0853350]
- Div Of Chem, Bioeng, Env, & Transp Sys
- Directorate For Engineering [853350] Funding Source: National Science Foundation
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This letter describes a novel experimental structure that captures the impact of rapid temperature transients and repetitive cycling on the thermal and electrical properties of Ge(2)Sb(2)Te(5) (GST). The microthermal stage dramatically improves the temporal resolution for heating and enables simultaneous thermal and electrical characterizations. Thermal conductivity measurements show phase transitions of GST accompanied by abrupt changes in electrical resistance. Repetitive cycling with durations down to 100 ns produces melt-quenched amorphous GST with the thermal conductivity 40% lower than that of crystalline GST. Recrystallization increases conductivity but not up to the value achieved by long-timescale bulk annealing. This is potentially because the rapidly recrystallized GST contains more disorder near the interface.
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