Journal
IEEE ELECTRON DEVICE LETTERS
Volume 32, Issue 3, Pages 381-383Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2010.2100019
Keywords
Charge-trapping Flash (CTF); HfON; ion implant; nonvolatile memory (NVM)
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Funding
- National Science Council of Taiwan
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We have fabricated the TaN-[SiO2-LaAlO3]-HfON-[LaAlO3-SiO2]-Si charge-trapping Flash device. A large 6.4-V initial memory window, a 4.3-V 10-year extrapolated retention window at 125 degrees C, and a 5.5-V endurance window at 10(6) cycles were measured under very fast 100-mu s and low +/- 16-V program/erase. These excellent results were achieved using an As+ implant into the HfON trapping layer, which were significantly better than those of the control device without ion implantation.
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