Higher Gate Capacitance Ge n-MOSFETs Using Laser Annealing

Title
Higher Gate Capacitance Ge n-MOSFETs Using Laser Annealing
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 32, Issue 4, Pages 449-451
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2011-02-23
DOI
10.1109/led.2011.2106478

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