Novel Germanium n-MOSFETs With Raised Source/Drain on Selectively Grown Ge on Si for Monolithic Integration

Published 2011 View Full Article

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Title
Novel Germanium n-MOSFETs With Raised Source/Drain on Selectively Grown Ge on Si for Monolithic Integration
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 32, Issue 4, Pages 446-448
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2011-02-23
DOI
10.1109/led.2011.2106756
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