Journal
IEEE ELECTRON DEVICE LETTERS
Volume 32, Issue 3, Pages 327-329Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2010.2095493
Keywords
High-dielectric-constant dielectric; nanowire (NW); polycrystalline silicon (poly-Si); thin-film transistor (TFT)
Categories
Funding
- National Science Council, Taiwan [NSC-96-2628-E-009-167-MY3]
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High-performance polycrystalline-silicon (poly-Si) nanowire (NW) thin-film transistors (TFTs) using hafnium dioxide (HfO2) as gate dielectric is successfully fabricated for the first time. The excellent short-channel characteristics are attributed to the high-kappa gate dielectric, ultrathin poly-SiNW channel thickness, and omega-shaped gate structure. The record high driving capability of 549 mu A/mu m results from the ultrashort gate length (L-G), thin equivalent oxide thickness, and Ni silicide metal source/drain. This letter reveals the opportunity of high-performance poly-Si TFT circuits for system-on-panel and 3-D integrated circuit (3-D IC) applications.
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