Journal
IEEE ELECTRON DEVICE LETTERS
Volume 32, Issue 7, Pages 907-909Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2011.2144953
Keywords
LTPS; NBTI; tensile strained
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Funding
- National Science Council [NSC-99-2120-M-110-001, 97-2112-M-110-009-MY3]
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This letter investigates the negative-bias temperature instability (NBTI) degradation of p-channel low-temperature polycrystalline-silicon thin-film transistors (LTPS TFTs) under mechanical tensile stress. Experimental results reveal that the interface state density N-it and grain boundary trap density N-trap of tensile-strained LTPS TFTs are more pronounced than those of unstrained LTPS TFTs. Extracted density of states and conduction activation energy E-a both show increases due to the strained Si-Si bonds, which implies that strained Si-Si bonds are able to react with dissociated H during NBTI stress. Therefore, NBTI degradation is more significant after tensile strain than in an unstrained condition.
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