Enhanced Extraction Efficiency of InGaN-Based Light-Emitting Diodes Using 100-kHz Femtosecond-Laser-Scribing Technology

Published 2010 View Full Article

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Journal

IEEE ELECTRON DEVICE LETTERS

Volume 31, Issue 3, Pages 213-215

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Online

2010-01-20

DOI

10.1109/led.2009.2037592

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