Journal
IEEE ELECTRON DEVICE LETTERS
Volume 31, Issue 9, Pages 1050-1052Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2010.2052779
Keywords
Charge carrier mobility; field-effect transistors (FETs); organic compounds; thin-film transistors
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Funding
- National Science Foundation (NSF) [ECCS-0644656, CHE-0117752, CHE-0641523]
- New York State Office of Science, Technology, and Academic Research
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We characterize the influence of interfacial trap sites on carrier scattering and subsequent contribution to channel noise by taking 1/f noise measurements on pentacene organic field-effect transistors (OFETs). The noise dependence on drain current from OFETs with UV-ozone treated parylene gate dielectric before the deposition of the semiconductor is compared to that of otherwise identical OFETs with no air exposure during fabrication. Our studies indicate a different noise characteristic in the two samples, which is further confirmed by increasing the carrier density under illumination and comparing the noise spectrum for photogenerated charges with gate-field-induced carriers.
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