High-Permittivity Dielectric Stack on Gallium Nitride Formed by Silane Surface Passivation and Metal–Organic Chemical Vapor Deposition

Authors

Keywords

Journal

Volume 31, Issue 1, Pages 8-10

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Online

2009-11-24

DOI

10.1109/led.2009.2035144

References

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