Benefit of NMOS by Compressive SiN as Stress Memorization Technique and Its Mechanism

Published 2010 View Full Article

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Title
Benefit of NMOS by Compressive SiN as Stress Memorization Technique and Its Mechanism
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 31, Issue 4, Pages 281-283
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2010-03-02
DOI
10.1109/led.2010.2041524
References
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