Lateral Strain Profile as Key Technology Booster for All-Silicon Tunnel FETs

Published 2009 View Full Article

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Title
Lateral Strain Profile as Key Technology Booster for All-Silicon Tunnel FETs
Authors
Keywords
-
Journal
IEEE ELECTRON DEVICE LETTERS
Volume 30, Issue 6, Pages 656-658
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2009-04-29
DOI
10.1109/led.2009.2018127

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