Journal
IEEE ELECTRON DEVICE LETTERS
Volume 30, Issue 9, Pages 999-1001Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2009.2027723
Keywords
LaTiO; low V-t; solid-phase diffusion (SPD)
Categories
Funding
- National Science Council of Taiwan [NSC 97-2120-M-009-008]
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In this letter, we report a low threshold voltage (VI) of 0.12 V in self-aligned gate-first TaN/LaTiO n-MOSFETs, at an equivalent oxide thickness of only 0.63 run. This was achieved by using Ni-induced solid-phase diffusion of SiO2-covered Ni/Sb that reduced the high-kappa dielectric interfacial reactions.
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