In Situ Surface Passivation and CMOS-Compatible Palladium–Germanium Contacts for Surface-Channel Gallium Arsenide MOSFETs

Published 2008 View Full Article

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Title
In Situ Surface Passivation and CMOS-Compatible Palladium–Germanium Contacts for Surface-Channel Gallium Arsenide MOSFETs
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 29, Issue 6, Pages 553-556
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2008-05-21
DOI
10.1109/led.2008.921393

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