Equivalent Circuit Model for the Gate Leakage Current in Broken Down $\hbox{HfO}_{2}/\hbox{TaN/TiN}$ Gate Stacks

Published 2008 View Full Article

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Title
Equivalent Circuit Model for the Gate Leakage Current in Broken Down $\hbox{HfO}_{2}/\hbox{TaN/TiN}$ Gate Stacks
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 29, Issue 12, Pages 1353-1355
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2008-11-26
DOI
10.1109/led.2008.2006413

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