Effect of Floating-Body and Stress Bias on NBTI and HCI on 65-nm SOI pMOSFETs

Published 2008 View Full Article

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Title
Effect of Floating-Body and Stress Bias on NBTI and HCI on 65-nm SOI pMOSFETs
Authors
Keywords
-
Journal
IEEE ELECTRON DEVICE LETTERS
Volume 29, Issue 3, Pages 262-264
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2008-03-01
DOI
10.1109/led.2007.915382

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