Impact of Engineered Ti Layer on the Memory Performance of HfO[sub x]-Based Resistive Memory

On the Gradual Unipolar and Bipolar Resistive Switching of TiN\HfO[sub 2]\Pt Memory Systems

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Improved Bipolar Resistive Switching of HfOx/TiN Stack with a Reactive Metal Layer and Post Metal Annealing

(2010) Pang-Shiu Chen et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Effects of Ti top electrode thickness on the resistive switching behaviors of rf-sputtered ZrO2 memory films

(2009) Sheng-Yu Wang et al.   APPLIED PHYSICS LETTERS

Improved Uniformity of Resistive Switching Behaviors in HfO[sub 2] Thin Films with Embedded Al Layers

(2009) Shimeng Yu et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap

(2009) H.Y. Lee et al.   IEEE ELECTRON DEVICE LETTERS

Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications

(2009) Ch. Walczyk et al.   JOURNAL OF APPLIED PHYSICS

Physicochemical and electrical characterizations of atomic layer deposition grown HfO[sub 2] on TiN and Pt for metal-insulator-metal application

(2009) C. Jorel et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Al electrode dependent transition to bipolar resistive switching characteristics in pure TiO2 films

(2008) Young Ho Do et al.   JOURNAL OF APPLIED PHYSICS

Memristive switching mechanism for metal/oxide/metal nanodevices

(2008) J. Joshua Yang et al.   Nature Nanotechnology

Resistance Switching Behaviors of Hafnium Oxide Films Grown by MOCVD for Nonvolatile Memory Applications

(2007) Seunghyup Lee et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY