Improved Bipolar Resistive Switching of HfOx/TiN Stack with a Reactive Metal Layer and Post Metal Annealing

标题
Improved Bipolar Resistive Switching of HfOx/TiN Stack with a Reactive Metal Layer and Post Metal Annealing
作者
关键词
-
出版物
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 49, Issue 4, Pages 04DD18
出版商
Japan Society of Applied Physics
发表日期
2010-04-20
DOI
10.1143/jjap.49.04dd18

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