Enhanced magnetic modulation in HfO2-based resistive memory with an Hf top electrode

Bias voltage-controlled ferromagnetism switching in undoped zinc oxide thin film memory device

(2016) S. S. Li et al.   APPLIED PHYSICS LETTERS

Unipolar resistive switching characteristics and scaling behaviors in La2Mo2O9 thin films for nonvolatile memory applications

(2016) L. Hu et al.   JOURNAL OF APPLIED PHYSICS

Oxygen Vacancy in Hafnia as a Blue Luminescence Center and a Trap of Charge Carriers

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Resistive switching and electrical control of ferromagnetism in a Ag/HfO2/Nb:SrTiO3/Ag resistive random access memory (RRAM) device at room temperature

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Coexistence of electric field controlled ferromagnetism and resistive switching for TiO2 film at room temperature

(2015) Shaoqing Ren et al.   APPLIED PHYSICS LETTERS

Nanoscale cation motion in TaOx, HfOx and TiOx memristive systems

(2015) Anja Wedig et al.   Nature Nanotechnology

Control of magnetism by electric fields

(2015) Fumihiro Matsukura et al.   Nature Nanotechnology

Electric field control of magnetism in Ti/ZnO/Pt and Ti/ZnO/SRO devices

(2015) Shu-xia Ren et al.   Journal of Materials Chemistry C

The origin of 2.7 eV luminescence and 5.2 eV excitation band in hafnium oxide

(2014) T. V. Perevalov et al.   APPLIED PHYSICS LETTERS

Possible origin of ferromagnetism in undoped monoclinic HfO 2 film

(2014) Min Wang et al.   COMPUTATIONAL MATERIALS SCIENCE

Multi-level control of conductive nano-filament evolution in HfO2 ReRAM by pulse-train operations

(2014) L. Zhao et al.   Nanoscale

Multimode threshold and bipolar resistive switching in bi-layered Pt-Fe2O3 core-shell and Fe2O3 nanoparticle assembly

(2013) Jin-Yong Lee et al.   APPLIED PHYSICS LETTERS

Migration of interfacial oxygen ions modulated resistive switching in oxide-based memory devices

(2013) C. Chen et al.   JOURNAL OF APPLIED PHYSICS

Resistive switching mechanisms relating to oxygen vacancies migration in both interfaces in Ti/HfOx/Pt memory devices

(2013) Y. S. Lin et al.   JOURNAL OF APPLIED PHYSICS

Memristive devices for computing

(2012) J. Joshua Yang et al.   Nature Nanotechnology

Transport properties of HfO2−xbased resistive-switching memories

(2012) Zhongrui Wang et al.   PHYSICAL REVIEW B

Impact of Temperature on the Resistive Switching Behavior of Embedded $\hbox{HfO}_{2}$-Based RRAM Devices

(2011) Christian Walczyk et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Electrode dependence of filament formation in HfO2 resistive-switching memory

(2011) Kuan-Liang Lin et al.   JOURNAL OF APPLIED PHYSICS

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Bipolar resistive switching behavior in Ti/MnO2/Pt structure for nonvolatile memory devices

(2009) Min Kyu Yang et al.   APPLIED PHYSICS LETTERS

Characteristics and mechanism of conduction/set process in TiN∕ZnO∕Pt resistance switching random-access memories

(2008) Nuo Xu et al.   APPLIED PHYSICS LETTERS