Coexistence of electric field controlled ferromagnetism and resistive switching for TiO2 film at room temperature

The Ag/TiO2/Nb:SrTiO3/Ag device exhibits the coexistence of electric field controlled ferromagnetism and resistive switching at room temperature. The bipolar resistive switching in Ag/TiO2/Nb: SrTiO3/Ag device may be dominated by the modulation of Schottky-like barrier with the electron injection-trapped/detrapped process at the interface of TiO2/Nb:SrTiO3. We suggest that the electric field-induced magnetization modulation originates mainly from the creation/annihilation of lots of oxygen vacancies in TiO2. (C) 2015 AIP Publishing LLC.