Computational investigation of the phase stability and the electronic properties for Gd-doped HfO2

Efficient stochastic generation of special quasirandom structures

(2013) A. van de Walle et al.   CALPHAD-COMPUTER COUPLING OF PHASE DIAGRAMS AND THERMOCHEMISTRY

First-Principles Study on Electronic Structure of Gd-Doped HfO2 High k Gate Dielectrics

(2012) Xiao-Jie Liu et al.   INTEGRATED FERROELECTRICS

Recent progress in ab initio simulations of hafnia-based gate stacks

(2012) H. Zhu et al.   JOURNAL OF MATERIALS SCIENCE

Ab initiostudy of phase transition and dielectric constants of high-κHfO2as a function of Ge alloying

(2012) A. Debernardi   PHYSICAL REVIEW B

Gd-doping effect on performance of HfO2 based resistive switching memory devices using implantation approach

(2011) Haowei Zhang et al.   APPLIED PHYSICS LETTERS

Stabilization of cubic structure in Mn-doped hafnia

(2011) Ling Gao et al.   CERAMICS INTERNATIONAL

First principles study of the structural, electronic, and dielectric properties of amorphous HfO2

(2011) Tsung-Ju Chen et al.   JOURNAL OF APPLIED PHYSICS

Interaction of oxygen vacancies and lanthanum in Hf-based high-kdielectrics: anab initioinvestigation

(2011) Ebrahim Nadimi et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Band structure and electrical properties of Gd-doped HfO2 high k gate dielectric

(2010) Yuhua Xiong et al.   APPLIED PHYSICS LETTERS

The effect of dopants on the dielectric constant of HfO[sub 2] and ZrO[sub 2] from first principles

(2008) Dominik Fischer et al.   APPLIED PHYSICS LETTERS

Effect of ionic substitutions on the structure and dielectric properties of hafnia: A first principles study

(2008) Eric Cockayne   JOURNAL OF APPLIED PHYSICS

Stabilization of the high-k tetragonal phase in HfO2: The influence of dopants and temperature from ab initio simulations

(2008) Dominik Fischer et al.   JOURNAL OF APPLIED PHYSICS

First-principles study on doping and phase stability ofHfO2

(2008) Choong-Ki Lee et al.   PHYSICAL REVIEW B