First-Principles Study on Electronic Structure of Gd-Doped HfO2 High k Gate Dielectrics

标题
First-Principles Study on Electronic Structure of Gd-Doped HfO2 High k Gate Dielectrics
作者
关键词
-
出版物
INTEGRATED FERROELECTRICS
Volume 134, Issue 1, Pages 3-9
出版商
Informa UK Limited
发表日期
2012-04-21
DOI
10.1080/10584587.2012.663641

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