Interaction of oxygen vacancies and lanthanum in Hf-based high-kdielectrics: anab initioinvestigation

Electronic band structure of zirconia and hafnia polymorphs from theGWperspective

(2010) Hong Jiang et al.   PHYSICAL REVIEW B

High-κ/Metal Gate Science and Technology

(2009) Supratik Guha et al.   Annual Review of Materials Research

Interaction of La2O3 capping layers with HfO2 gate dielectrics

(2009) M. Copel et al.   APPLIED PHYSICS LETTERS

Passivation of oxygen vacancy states and suppression of Fermi pinning in HfO2 by La addition

(2009) D. Liu et al.   APPLIED PHYSICS LETTERS

Atomic mechanism of flat-band voltage shifts by La2O3 and Al2O3 in gate stacks

(2009) L. Lin et al.   APPLIED PHYSICS LETTERS

Change of the trap energy levels of the atomic layer deposited HfLaOx films with different La concentration

(2009) Chee-Hong An et al.   APPLIED PHYSICS LETTERS

Thermal stability of lanthanum in hafnium-based gate stacks

(2009) M. I. Medina-Montes et al.   JOURNAL OF APPLIED PHYSICS

Atomic mechanism of flat-band voltage shifts at La2O3, Al2O3 and Nb2O5 capping layers

(2009) L. Lin et al.   MICROELECTRONIC ENGINEERING

Experimental evidence of suppression on oxygen vacancy formation in Hf based high-κ gate dielectrics with La incorporation

(2009) Chun-Chang Lu et al.   MICROELECTRONIC ENGINEERING

Reduction in charged defects associated with oxygen vacancies in hafnia by magnesium incorporation: First-principles study

(2008) Naoto Umezawa et al.   APPLIED PHYSICS LETTERS

First-principles simulations of the leakage current in metal-oxide-semiconductor structures caused by oxygen vacancies in HfO2high-Kgate dielectric

(2007) L. F. Mao et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE