Charge transport mechanism in thin films of amorphous and ferroelectric Hf0.5Zr0.5O2

标题
Charge transport mechanism in thin films of amorphous and ferroelectric Hf0.5Zr0.5O2
作者
关键词
Oxygen Vacancy, JETP Letter, Atomic Layer Deposition, Voltage Characteristic, Rutherford Backscattering Spectroscopy
出版物
JETP LETTERS
Volume 102, Issue 8, Pages 544-547
出版商
Pleiades Publishing Ltd
发表日期
2016-01-07
DOI
10.1134/s0021364015200047

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