High Mg-content wurtzite MgZnO alloys and their application in deep-ultraviolet light-emitters pumped by accelerated electrons

High p-type conduction in high-Al content Mg-doped AlGaN

(2013) Toru Kinoshita et al.   APPLIED PHYSICS LETTERS

A 2-inch, large-size deep ultraviolet light-emitting device using dynamically controlled micro-plasma-excited AlGaN

(2013) Y. Aoyagi et al.   APPLIED PHYSICS LETTERS

Mg-Doped ZnO Nanoparticles for Efficient Sunlight-Driven Photocatalysis

(2012) Vinodkumar Etacheri et al.   ACS Applied Materials & Interfaces

Ultraviolet emissions excited by accelerated electrons

(2012) P.-N. Ni et al.   OPTICS LETTERS

Fabrication of Deep-Ultraviolet-Light-Source Tube Using Si-Doped AlGaN

(2011) Yuki Shimahara et al.   Applied Physics Express

Deep-ultraviolet light-emitting device realized via a hole-multiplication process

(2011) H. Zhu et al.   APPLIED PHYSICS LETTERS

Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain

(2011) Y. N. Hou et al.   APPLIED PHYSICS LETTERS

Improvement in Output Power of 280-nm Deep Ultraviolet Light-Emitting Diode by Using AlGaN Multi Quantum Wells

(2010) Akira Fujioka et al.   Applied Physics Express

Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face III-nitride structure

(2010) L. Zhang et al.   APPLIED PHYSICS LETTERS

Current-induced degradation of high performance deep ultraviolet light emitting diodes

(2010) Craig G. Moe et al.   APPLIED PHYSICS LETTERS

Electrochemical Route to p-Type Doping of ZnO Nanowires

(2010) M. A. Thomas et al.   Journal of Physical Chemistry Letters

100 mW deep-ultraviolet emission from aluminium-nitride-based quantum wells pumped by an electron beam

(2010) Takao Oto et al.   Nature Photonics

Electron beam pumped lasers based on II-VI compound nanostructures from the visible to UVA

(2010) Michael D. Tiberi et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Polarization-Induced Hole Doping in Wide-Band-Gap Uniaxial Semiconductor Heterostructures

(2010) J. Simon et al.   SCIENCE

Ultraviolet Photodetector Based on a MgZnO Film Grown by Radio-Frequency Magnetron Sputtering

(2009) Yanmin Zhao et al.   ACS Applied Materials & Interfaces

280 nm Deep Ultraviolet Light Emitting Diode Lamp with an AlGaN Multiple Quantum Well Active Region

(2009) Vinod Adivarahan et al.   Applied Physics Express

Solar-blind 4.55eV band gap Mg0.55Zn0.45O components fabricated using quasi-homo buffers

(2009) Z.L. Liu et al.   JOURNAL OF CRYSTAL GROWTH

Far-ultraviolet plane-emission handheld device based on hexagonal boron nitride

(2009) Kenji Watanabe et al.   Nature Photonics

222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire

(2009) Hideki Hirayama et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Structural phase transitions and fundamental band gaps ofMgxZn1−xOalloys from first principles

(2009) I. V. Maznichenko et al.   PHYSICAL REVIEW B

227 nm AlGaN Light-Emitting Diode with 0.15 mW Output Power Realized using a Thin Quantum Well and AlN Buffer with Reduced Threading Dislocation Density

(2008) Hideki Hirayama et al.   Applied Physics Express

Effects of a compositionally graded buffer layer on stress evolution during GaN and AlxGa1−xN MOCVD on SiC substrates

(2007) Jeremy D. Acord et al.   JOURNAL OF CRYSTAL GROWTH