期刊
APPLIED PHYSICS LETTERS
卷 102, 期 1, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4773594
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资金
- Grants-in-Aid for Scientific Research [22686008] Funding Source: KAKEN
We report on the successful fabrication of highly conductive p-type Mg-doped Al0.7Ga0.3N thin films grown on sapphire substrates by metal-organic chemical vapor deposition. Photoluminescence measurements show that Mg doping for growth with a high V/III ratio and moderate Mg concentration can effectively suppress self-compensation by the formation of nitrogen vacancy complexes. The lowest electrical resistivity was found to be 47 Omega cm at room temperature. Moreover, the temperature dependence of the p-type conductivity in these high-Al content AlGaN films shows the extremely small effective activation energies of 47-72meV at temperatures below 500 K. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4773594]
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