Quasi-reversible point defect relaxation in amorphous In-Ga-Zn-O thin films by in situ electrical measurements
出版年份 2013 全文链接
标题
Quasi-reversible point defect relaxation in amorphous In-Ga-Zn-O thin films by in situ electrical measurements
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 102, Issue 12, Pages 122103
出版商
AIP Publishing
发表日期
2013-03-26
DOI
10.1063/1.4796119
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Identification of the native defect doping mechanism in amorphous indium zinc oxide thin films studied using ultra high pressure oxidation
- (2013) Sunghwan Lee et al. APPLIED PHYSICS LETTERS
- Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances
- (2012) E. Fortunato et al. ADVANCED MATERIALS
- Structural relaxation in amorphous oxide semiconductor, a-In-Ga-Zn-O
- (2012) Keisuke Ide et al. JOURNAL OF APPLIED PHYSICS
- Defect mechanisms in the In2O3(ZnO)k system (k = 3, 5, 7, 9)
- (2012) E. Mitchell Hopper et al. JOURNAL OF APPLIED PHYSICS
- Surface Origin of High Conductivities in UndopedIn2O3Thin Films
- (2012) S. Lany et al. PHYSICAL REVIEW LETTERS
- Amorphous InGaZnO4 films: Gas sensor response and stability
- (2012) Dae Jin Yang et al. SENSORS AND ACTUATORS B-CHEMICAL
- Review of recent developments in amorphous oxide semiconductor thin-film transistor devices
- (2011) Joon Seok Park et al. THIN SOLID FILMS
- Large Photoresponse in Amorphous In–Ga–Zn–O and Origin of Reversible and Slow Decay
- (2010) Dong Hee Lee et al. ELECTROCHEMICAL AND SOLID STATE LETTERS
- All-Amorphous-Oxide Transparent, Flexible Thin-Film Transistors. Efficacy of Bilayer Gate Dielectrics
- (2010) Jun Liu et al. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
- Present status of amorphous In–Ga–Zn–O thin-film transistors
- (2010) Toshio Kamiya et al. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS
- Material characteristics and applications of transparent amorphous oxide semiconductors
- (2010) Toshio Kamiya et al. NPG Asia Materials
- High performance thin film transistor with cosputtered amorphous Zn–In–Sn–O channel: Combinatorial approach
- (2009) Min Ki Ryu et al. APPLIED PHYSICS LETTERS
- Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors
- (2009) Chang-Jung Kim et al. APPLIED PHYSICS LETTERS
- Subgap states in transparent amorphous oxide semiconductor, In–Ga–Zn–O, observed by bulk sensitive x-ray photoelectron spectroscopy
- (2008) Kenji Nomura et al. APPLIED PHYSICS LETTERS
- Modeling of amorphous InGaZnO4 thin film transistors and their subgap density of states
- (2008) Hsing-Hung Hsieh et al. APPLIED PHYSICS LETTERS
- Trap densities in amorphous-InGaZnO4 thin-film transistors
- (2008) Mutsumi Kimura et al. APPLIED PHYSICS LETTERS
- High mobility indium free amorphous oxide thin film transistors
- (2008) Elvira M. C. Fortunato et al. APPLIED PHYSICS LETTERS
- Optical and Carrier Transport Properties of Cosputtered Zn–In–Sn–O Films and Their Applications to TFTs
- (2008) Kachirayil J. Saji et al. JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- Amorphous Sn-Ga-Zn-O channel thin-film transistors
- (2008) Youichi Ogo et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Publish scientific posters with Peeref
Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.
Learn MoreBecome a Peeref-certified reviewer
The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.
Get Started