Extremely low surface recombination velocities in black silicon passivated by atomic layer deposition

Chemical and structural study of electrically passivating Al2O3/Si interfaces prepared by atomic layer deposition

(2012) Volker Naumann et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Electronic and chemical properties of the c-Si/Al2O3 interface

(2011) Florian Werner et al.   JOURNAL OF APPLIED PHYSICS

Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3

(2011) B. Hoex et al.   Physica Status Solidi-Rapid Research Letters

Conformal Transparent Conducting Oxides on Black Silicon

(2010) Martin Otto et al.   ADVANCED MATERIALS

Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks

(2010) G. Dingemans et al.   APPLIED PHYSICS LETTERS

Silicon surface passivation by ultrathin Al2O3films synthesized by thermal and plasma atomic layer deposition

(2009) G. Dingemans et al.   Physica Status Solidi-Rapid Research Letters

On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3

(2008) B. Hoex et al.   JOURNAL OF APPLIED PHYSICS

Black surface structures for crystalline silicon solar cells

(2008) Jinsu Yoo et al.   Materials Science and Engineering B-Advanced Functional Solid-State Materials

Self-consistent optical parameters of intrinsic silicon at 300K including temperature coefficients

(2008) Martin A. Green   SOLAR ENERGY MATERIALS AND SOLAR CELLS