High performance indium-zinc-oxide thin-film transistors fabricated with a back-channel-etch-technique

标题
High performance indium-zinc-oxide thin-film transistors fabricated with a back-channel-etch-technique
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 99, Issue 25, Pages 253501
出版商
AIP Publishing
发表日期
2011-12-20
DOI
10.1063/1.3670336

向作者/读者发起求助以获取更多资源

Find the ideal target journal for your manuscript

Explore over 38,000 international journals covering a vast array of academic fields.

Search

Become a Peeref-certified reviewer

The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.

Get Started