High-Performance Indium–Gallium–Zinc Oxide Thin-Film Transistors Based on Anodic Aluminum Oxide

标题
High-Performance Indium–Gallium–Zinc Oxide Thin-Film Transistors Based on Anodic Aluminum Oxide
作者
关键词
-
出版物
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 58, Issue 5, Pages 1452-1455
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2011-04-07
DOI
10.1109/ted.2011.2115248

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