Weak Carrier/Exciton Localization in InGaN Quantum Wells for Green Laser Diodes Fabricated on Semi-Polar {20\bar21} GaN Substrates

出版年份 2010 全文链接

标题

Weak Carrier/Exciton Localization in InGaN Quantum Wells for Green Laser Diodes Fabricated on Semi-Polar {20\bar21} GaN Substrates

作者

关键词

-

出版物

Applied Physics Express

Volume 3, Issue 2, Pages 021002

出版商

IOP Publishing

发表日期

2010-01-22

DOI

10.1143/apex.3.021002

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