Analysis of trap state densities at HfO2/In0.53Ga0.47As interfaces

Border traps in Al2O3/In0.53Ga0.47As (100) gate stacks and their passivation by hydrogen anneals

(2010) Eun Ji Kim et al.   APPLIED PHYSICS LETTERS

Temperature and frequency dependent electrical characterization of HfO2/InxGa1−xAs interfaces using capacitance-voltage and conductance methods

(2009) É. O’Connor et al.   APPLIED PHYSICS LETTERS

Metal-oxide-semiconductor capacitors with ZrO2 dielectrics grown on In0.53Ga0.47As by chemical beam deposition

(2009) Roman Engel-Herbert et al.   APPLIED PHYSICS LETTERS

Self-cleaning and surface recovery with arsine pretreatment in ex situ atomic-layer-deposition of Al2O3 on GaAs

(2009) Cheng-Wei Cheng et al.   APPLIED PHYSICS LETTERS

The Fermi-level efficiency method and its applications on high interface trap density oxide-semiconductor interfaces

(2009) H. C. Lin et al.   APPLIED PHYSICS LETTERS

On the interface state density at In0.53Ga0.47As/oxide interfaces

(2009) G. Brammertz et al.   APPLIED PHYSICS LETTERS

Atomically abrupt and unpinned Al2O3/In0.53Ga0.47As interfaces: Experiment and simulation

(2009) Eun Ji Kim et al.   JOURNAL OF APPLIED PHYSICS

Electrical study of sulfur passivated In0.53Ga0.47As MOS capacitor and transistor with ALD Al2O3 as gate insulator

(2009) Han-Chung Lin et al.   MICROELECTRONIC ENGINEERING

In0.53Ga0.47As based metal oxide semiconductor capacitors with atomic layer deposition ZrO2 gate oxide demonstrating low gate leakage current and equivalent oxide thickness less than 1nm

(2008) S. Koveshnikov et al.   APPLIED PHYSICS LETTERS

Achieving 1nm capacitive effective thickness in atomic layer deposited HfO2 on In0.53Ga0.47As

(2008) K. Y. Lee et al.   APPLIED PHYSICS LETTERS

On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

(2008) Koen Martens et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Capacitance–Voltage Characterization of GaAs–Oxide Interfaces

(2008) G. Brammertz et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY