期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 57, 期 1, 页码 157-163出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2009.2034495
关键词
Compressive stress; dislocation; external efficiency; GaN; light-emitting diode (LED); patterned sapphire
资金
- Korea Science and Engineering Foundation, Ministry of Science and Technology [M10600000273-0650000-27310]
- Brain Korea [21]
- Korea Electronics Technology Institute
To improve the external quantum efficiency, a high-quality InGaN/GaN film was grown on a cone-shape-patterned sapphire substrate (CSPSS) by using metal-organic chemical vapor deposition. The surface pattern of the CSPSS seems to be more helpful for the accommodative relaxation of compressive strain related to the lattice mismatch between GaN and a sapphire substrate because the growth mode of GaN on the CSPSS was similar to that of the epitaxial lateral overgrowth. The output power of a light-emitting diode (LED) grown on the CSPSS was estimated to be 16.5 mW at a forward current of 20 mA, which is improved by 35% compared to that of a LED grown on a conventional sapphire substrate. The significant enhancement in output power is attributed to both the increase of the extraction efficiency, resulted from the increase in photon escaping probability due to enhanced light scattering at the CSPSS, and the improvement of the crystal quality due to the reduction of dislocation.
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