Facile Encapsulation of Oxide based Thin Film Transistors by Atomic Layer Deposition based on Ozone
出版年份 2013 全文链接
标题
Facile Encapsulation of Oxide based Thin Film Transistors by Atomic Layer Deposition based on Ozone
作者
关键词
-
出版物
ADVANCED MATERIALS
Volume 25, Issue 20, Pages 2821-2825
出版商
Wiley
发表日期
2013-04-17
DOI
10.1002/adma.201300549
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Water as Origin of Hysteresis in Zinc Tin Oxide Thin-Film Transistors
- (2012) M. Fakhri et al. ACS Applied Materials & Interfaces
- Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances
- (2012) E. Fortunato et al. ADVANCED MATERIALS
- Role of Adsorbed H$_{2}$O on Transfer Characteristics of Solution-Processed Zinc Tin Oxide Thin-Film Transistors
- (2012) DooHyun Kim et al. Applied Physics Express
- Chemistry of Lewis Acid–Base Pairs on Oxide Surfaces
- (2012) Horia Metiu et al. Journal of Physical Chemistry C
- Water-related abnormal instability of transparent oxide/organic hybrid thin film transistors
- (2011) Shinhyuk Yang et al. APPLIED PHYSICS LETTERS
- Enhanced stability against bias-stress of metal-oxide thin film transistors deposited at elevated temperatures
- (2011) M. Fakhri et al. APPLIED PHYSICS LETTERS
- Effect of oxygen on the threshold voltage of a-IGZO TFT
- (2011) Eu-Gene Chong et al. Journal of Electrical Engineering & Technology
- The origin of low water vapor transmission rates through Al2O3/ZrO2 nanolaminate gas-diffusion barriers grown by atomic layer deposition
- (2010) J. Meyer et al. APPLIED PHYSICS LETTERS
- Insight on the SU-8 resist as passivation layer for transparent Ga2O3–In2O3–ZnO thin-film transistors
- (2010) Antonis Olziersky et al. JOURNAL OF APPLIED PHYSICS
- Al2O3/ZrO2Nanolaminates as Ultrahigh Gas-Diffusion Barriers-A Strategy for Reliable Encapsulation of Organic Electronics
- (2009) Jens Meyer et al. ADVANCED MATERIALS
- The effect of moisture on the photon-enhanced negative bias thermal instability in Ga–In–Zn–O thin film transistors
- (2009) Kwang-Hee Lee et al. APPLIED PHYSICS LETTERS
- Environment-dependent metastability of passivation-free indium zinc oxide thin film transistor after gate bias stress
- (2009) Po-Tsun Liu et al. APPLIED PHYSICS LETTERS
- Encapsulation of Zinc Tin Oxide Based Thin Film Transistors
- (2009) Patrick Görrn et al. Journal of Physical Chemistry C
- Passivation of Bottom-Gate IGZO Thin Film Transistors
- (2009) D. H. Cho et al. JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Zinc tin oxide based driver for highly transparent active matrix OLED displays
- (2009) Patrick Görrn et al. SOLID-STATE ELECTRONICS
- Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors
- (2008) Jae Kyeong Jeong et al. APPLIED PHYSICS LETTERS
- High-performance amorphous gallium indium zinc oxide thin-film transistors through N2O plasma passivation
- (2008) Jaechul Park et al. APPLIED PHYSICS LETTERS
- Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water
- (2008) Jin-Seong Park et al. APPLIED PHYSICS LETTERS
- Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors
- (2008) Jeong-Min Lee et al. APPLIED PHYSICS LETTERS
- Al2O3 Atomic Layer Deposition with Trimethylaluminum and Ozone Studied by in Situ Transmission FTIR Spectroscopy and Quadrupole Mass Spectrometry
- (2008) David N. Goldstein et al. Journal of Physical Chemistry C
Find the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
SearchAdd your recorded webinar
Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.
Upload Now