2D Tunnel Field Effect Transistors (FETs) with a Stable Charge-Transfer-Type p+ -WSe2 Source
出版年份 2018 全文链接
标题
2D Tunnel Field Effect Transistors (FETs) with a Stable Charge-Transfer-Type p+
-WSe2
Source
作者
关键词
-
出版物
Advanced Electronic Materials
Volume 4, Issue 7, Pages 1800207
出版商
Wiley
发表日期
2018-06-01
DOI
10.1002/aelm.201800207
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Band tail interface states and quantum capacitance in a monolayer molybdenum disulfide field-effect-transistor
- (2018) Nan Fang et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Transport properties of the top and bottom surfaces in monolayer MoS2 grown by chemical vapor deposition
- (2017) S. Kurabayashi et al. Nanoscale
- Doping of two-dimensional MoS2 by high energy ion implantation
- (2017) Kang Xu et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Tunable SnSe2 /WSe2 Heterostructure Tunneling Field Effect Transistor
- (2017) Xiao Yan et al. Small
- Few-Layer MoS2 p-Type Devices Enabled by Selective Doping Using Low Energy Phosphorus Implantation
- (2016) Ankur Nipane et al. ACS Nano
- Air-Stable n-Doping of WSe2 by Anion Vacancy Formation with Mild Plasma Treatment
- (2016) Mahmut Tosun et al. ACS Nano
- Buffer layer engineering on graphene via various oxidation methods for atomic layer deposition
- (2016) Nobuaki Takahashi et al. Applied Physics Express
- 2D-2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures
- (2016) Tania Roy et al. APPLIED PHYSICS LETTERS
- Transport Properties of a MoS2/WSe2 Heterojunction Transistor and Its Potential for Application
- (2016) Amirhasan Nourbakhsh et al. NANO LETTERS
- Self-Limiting Oxides on WSe2 as Controlled Surface Acceptors and Low-Resistance Hole Contacts
- (2016) Mahito Yamamoto et al. NANO LETTERS
- Atomic-Monolayer MoS2Band-to-Band Tunneling Field-Effect Transistor
- (2016) Yann-Wen Lan et al. Small
- Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic
- (2016) Jaewoo Shim et al. Nature Communications
- Novel vertical hetero- and homo-junction tunnel field-effect transistors based on multi-layer 2D crystals
- (2016) Shang-Chun Lu et al. 2D Materials
- Dual-Gated MoS2/WSe2 van der Waals Tunnel Diodes and Transistors
- (2015) Tania Roy et al. ACS Nano
- Phase controlled synthesis of SnSe and SnSe2 hierarchical nanostructures made of single crystalline ultrathin nanosheets
- (2015) Parthiban Ramasamy et al. CRYSTENGCOMM
- Introduction to the Growth of Bulk Single Crystals of Two-Dimensional Transition-Metal Dichalcogenides
- (2015) Keiji Ueno JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN
- Esaki Diodes in van der Waals Heterojunctions with Broken-Gap Energy Band Alignment
- (2015) Rusen Yan et al. NANO LETTERS
- Self-Limiting Layer-by-Layer Oxidation of Atomically Thin WSe2
- (2015) Mahito Yamamoto et al. NANO LETTERS
- A subthermionic tunnel field-effect transistor with an atomically thin channel
- (2015) Deblina Sarkar et al. NATURE
- Fully dry PMMA transfer of graphene onh-BN using a heating/cooling system
- (2015) T Uwanno et al. 2D Materials
- Toward Low-Power Electronics: Tunneling Phenomena in Transition Metal Dichalcogenides
- (2014) Saptarshi Das et al. ACS Nano
- Electronics based on two-dimensional materials
- (2014) Gianluca Fiori et al. Nature Nanotechnology
- Isolation and characterization of few-layer black phosphorus
- (2014) Andres Castellanos-Gomez et al. 2D Materials
- Monolayer Transition Metal Dichalcogenide Channel-Based Tunnel Transistor
- (2014) Ram Krishna Ghosh et al. IEEE Journal of the Electron Devices Society
- Tunnel Field-Effect Transistors: State-of-the-Art
- (2014) Hao Lu et al. IEEE Journal of the Electron Devices Society
- High Performance Multilayer MoS2 Transistors with Scandium Contacts
- (2012) Saptarshi Das et al. NANO LETTERS
- Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te)
- (2012) Won Seok Yun et al. PHYSICAL REVIEW B
- Vertical Si-Nanowire $n$-Type Tunneling FETs With Low Subthreshold Swing ($\leq \hbox{50}\ \hbox{mV/decade}$ ) at Room Temperature
- (2011) Ramanathan Gandhi et al. IEEE ELECTRON DEVICE LETTERS
- Tunnel field-effect transistors as energy-efficient electronic switches
- (2011) Adrian M. Ionescu et al. NATURE
Find Funding. Review Successful Grants.
Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.
ExploreDiscover Peeref hubs
Discuss science. Find collaborators. Network.
Join a conversation