Role of quantum-confined stark effect on bias dependent photoluminescence of N-polar GaN/InGaN multi-quantum disk amber light emitting diodes

Role of dislocations and carrier concentration in limiting the electron mobility of InN films grown by plasma assisted molecular beam epitaxy

(2018) Malleswararao Tangi et al.   JOURNAL OF APPLIED PHYSICS

Anomalous photoluminescence thermal quenching of sandwiched single layer MoS_2

(2017) Malleswararao Tangi et al.   Optical Materials Express

Polarization field screening in thick (0001) InGaN/GaN single quantum well light-emitting diodes

(2016) N. G. Young et al.   APPLIED PHYSICS LETTERS

Electron mobility of self-assembled and dislocation free InN nanorods grown on GaN nano wall network template

(2016) Malleswararao Tangi et al.   JOURNAL OF APPLIED PHYSICS

Bandgap measurements and the peculiar splitting of E2H phonon modes of InxAl1-xN nanowires grown by plasma assisted molecular beam epitaxy

(2016) Malleswararao Tangi et al.   JOURNAL OF APPLIED PHYSICS

Radial Stark Effect in (In,Ga)N Nanowires

(2016) Jonas Lähnemann et al.   NANO LETTERS

Facile Formation of High-Quality InGaN/GaN Quantum-Disks-in-Nanowires on Bulk-Metal Substrates for High-Power Light-Emitters

(2016) Chao Zhao et al.   NANO LETTERS

Droop-Free, Reliable, and High-Power InGaN/GaN Nanowire Light-Emitting Diodes for Monolithic Metal-Optoelectronics

(2016) Chao Zhao et al.   NANO LETTERS

Piezo-generator integrating a vertical array of GaN nanowires

(2016) N Jamond et al.   NANOTECHNOLOGY

Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si

(2016) Yi Sun et al.   Nature Photonics

InGaN/Dilute-As GaNAs Interface Quantum Well for Red Emitters

(2016) Chee-Keong Tan et al.   Scientific Reports

High efficiency, full-color AlInGaN quaternary nanowire light emitting diodes with spontaneous core-shell structures on Si

(2015) Renjie Wang et al.   APPLIED PHYSICS LETTERS

Selective-area growth of GaN nanocolumns on Si(111) substrates for application to nanocolumn emitters with systematic analysis of dislocation filtering effect of nanocolumns

(2015) Katsumi Kishino et al.   NANOTECHNOLOGY

Single Nanowire Light-Emitting Diodes Using Uniaxial and Coaxial InGaN/GaN Multiple Quantum Wells Synthesized by Metalorganic Chemical Vapor Deposition

(2014) Yong-Ho Ra et al.   NANO LETTERS

Temperature-dependent photoluminescence in light-emitting diodes

(2014) Taiping Lu et al.   Scientific Reports

Remarkably Suppressed Luminescence Inhomogeneity in a (0001) InGaN Green Laser Structure

(2013) Mitsuru Funato et al.   Applied Physics Express

A geometrical model for the description of the AlN shell morphology in GaN-AlN core-shell nanowires

(2013) Karine Hestroffer et al.   JOURNAL OF APPLIED PHYSICS

Investigation of the electroluminescence spectrum shift of InGaN/GaN multiple quantum well light-emitting diodes under direct and pulsed currents

(2013) Cimang Lu et al.   JOURNAL OF APPLIED PHYSICS

Polarity determination of polar and semipolar (112¯2) InN and GaN layers by valence band photoemission spectroscopy

(2013) D. Skuridina et al.   JOURNAL OF APPLIED PHYSICS

Electrically driven polarized single-photon emission from an InGaN quantum dot in a GaN nanowire

(2013) Saniya Deshpande et al.   Nature Communications

In situ study of self-assembled GaN nanowires nucleation on Si(111) by plasma-assisted molecular beam epitaxy

(2012) K. Hestroffer et al.   APPLIED PHYSICS LETTERS

Superstructure of self-aligned hexagonal GaN nanorods formed on nitrided Si(111) surface

(2012) Praveen Kumar et al.   APPLIED PHYSICS LETTERS

Current path in light emitting diodes based on nanowire ensembles

(2012) F Limbach et al.   NANOTECHNOLOGY

A III–V nanowire channel on silicon for high-performance vertical transistors

(2012) Katsuhiro Tomioka et al.   NATURE

InN/InGaN multiple quantum wells emitting at 1.5 μm grown by molecular beam epitaxy

(2011) J. Grandal et al.   APPLIED PHYSICS LETTERS

Crystal Face-Dependent Nanopiezotronics of an Obliquely Aligned InN Nanorod Array

(2011) Nai-Jen Ku et al.   NANO LETTERS

Submicrometre resolved optical characterization of green nanowire-based light emitting diodes

(2011) A-L Bavencove et al.   NANOTECHNOLOGY

Coexistence of quantum-confined Stark effect and localized states in an (In,Ga)N/GaN nanowire heterostructure

(2011) Jonas Lähnemann et al.   PHYSICAL REVIEW B

Polarity of GaN nanowires grown by plasma-assisted molecular beam epitaxy on Si(111)

(2011) Karine Hestroffer et al.   PHYSICAL REVIEW B

Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells

(2009) Jae-Hyun Ryou et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Evidence for quantum-confined Stark effect in GaN/AlN quantum dots in nanowires

(2009) J. Renard et al.   PHYSICAL REVIEW B

Quantum-confined Stark effect on photoluminescence and electroluminescence characteristics of InGaN-based light-emitting diodes

(2008) Hisashi Masui et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Point Defect Configurations of Supersaturated Au Atoms Inside Si Nanowires

(2008) Sang Ho Oh et al.   NANO LETTERS

GaN nanorod light emitting diode arrays with a nearly constant electroluminescent peak wavelength

(2008) Cheng-Yin Wang et al.   OPTICS EXPRESS