标题
Temperature-dependent photoluminescence in light-emitting diodes
作者
关键词
-
出版物
Scientific Reports
Volume 4, Issue 1, Pages -
出版商
Springer Nature
发表日期
2014-08-20
DOI
10.1038/srep06131
参考文献
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注意:仅列出部分参考文献,下载原文获取全部文献信息。- Improvement of light power and efficiency droop in GaN-based LEDs using graded InGaN hole reservoir layer
- (2014) Taiping Lu et al. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- Contribution of deep-level defects to decreasing radiative efficiency of InGaN/GaN quantum wells with increasing emission wavelength
- (2014) Andrew M. Armstrong et al. Applied Physics Express
- Remarkably Suppressed Luminescence Inhomogeneity in a (0001) InGaN Green Laser Structure
- (2013) Mitsuru Funato et al. Applied Physics Express
- Improvement in the internal quantum efficiency of InN grown over nanoporous GaN by the reduction of Shockley-Read-Hall recombination centers
- (2013) Ian P. Seetoh et al. APPLIED PHYSICS LETTERS
- Effect of Stair-Case Electron Blocking Layer on the Performance of Blue InGaN Based LEDs
- (2013) Taiping Lu et al. Journal of Display Technology
- A novel wavelength-adjusting method in InGaN-based light-emitting diodes
- (2013) Zhen Deng et al. Scientific Reports
- Exploring the Origin of the Temperature-Dependent Behavior of PbS Nanocrystal Thin Films and Solar Cells
- (2012) Krisztina Szendrei et al. ADVANCED FUNCTIONAL MATERIALS
- Nanoscopic Photoluminescence Properties of a Green-Emitting InGaN Single Quantum Well on a $\{20\bar{2}1\}$ GaN Substrate Probed by Scanning Near-Field Optical Microscopy
- (2012) Akio Kaneta et al. Applied Physics Express
- Well-to-well non-uniformity in InGaN/GaN multiple quantum wells characterized by capacitance-voltage measurement with additional laser illumination
- (2012) Tae-Soo Kim et al. APPLIED PHYSICS LETTERS
- Anomalous temperature dependence of photoluminescence in self-assembled InGaN quantum dots
- (2012) Jun Ma et al. APPLIED PHYSICS LETTERS
- Advantages of GaN based light-emitting diodes with a p-InGaN hole reservoir layer
- (2012) Taiping Lu et al. APPLIED PHYSICS LETTERS
- Two Distinct Origins of Highly Localized Luminescent Centers within InGaN/GaN Quantum-Well Light-Emitting Diodes
- (2011) Suman De et al. ADVANCED FUNCTIONAL MATERIALS
- Electrically Driven Quantum Dot/Wire/Well Hybrid Light-Emitting Diodes
- (2011) Young-Ho Ko et al. ADVANCED MATERIALS
- Influence of indium composition in the prestrained InGaN interlayer on the strain relaxation of InGaN/GaN multiple quantum wells in laser diode structures
- (2011) Lei Liu et al. JOURNAL OF APPLIED PHYSICS
- High current-induced degradation of AlGaN ultraviolet light emitting diodes
- (2011) A. Pinos et al. JOURNAL OF APPLIED PHYSICS
- Quantum quench of Kondo correlations in optical absorption
- (2011) C. Latta et al. NATURE
- Colloidal nanoplatelets with two-dimensional electronic structure
- (2011) S. Ithurria et al. NATURE MATERIALS
- Nearly single-crystalline GaN light-emitting diodes on amorphous glass substrates
- (2011) Jun Hee Choi et al. Nature Photonics
- Exciton–polariton light–semiconductor coupling effects
- (2011) H. M. Gibbs et al. Nature Photonics
- Red spectral shift and enhanced quantum efficiency in phonon-free photoluminescence from silicon nanocrystals
- (2010) W. D. A. M. de Boer et al. Nature Nanotechnology
- 100 mW deep-ultraviolet emission from aluminium-nitride-based quantum wells pumped by an electron beam
- (2010) Takao Oto et al. Nature Photonics
- Polarization-Induced Hole Doping in Wide-Band-Gap Uniaxial Semiconductor Heterostructures
- (2010) J. Simon et al. SCIENCE
- Analysis of Improved Efficiency of InGaN Light-Emitting Diode With Bottom Photonic Crystal Fabricated by Anodized Aluminum Oxidxe
- (2009) Sang-Wan Ryu et al. ADVANCED FUNCTIONAL MATERIALS
- Non-blinking semiconductor nanocrystals
- (2009) Xiaoyong Wang et al. NATURE
- Prospects for LED lighting
- (2009) Siddha Pimputkar et al. Nature Photonics
- Positive binding energy of a biexciton confined in a localization center formed in a singleInxGa1−xN/GaNquantum disk
- (2009) R. Bardoux et al. PHYSICAL REVIEW B
- Temperature Dependence of Photoluminescence Spectra of Nondoped and Electron-DopedSrTiO3: Crossover from Auger Recombination to Single-Carrier Trapping
- (2009) Yasuhiro Yamada et al. PHYSICAL REVIEW LETTERS
- Evidence for Two Mg Related Acceptors in GaN
- (2009) B. Monemar et al. PHYSICAL REVIEW LETTERS
- Surface-Plasmon-Enhanced Light-Emitting Diodes
- (2008) Min-Ki Kwon et al. ADVANCED MATERIALS
- Classification and control of the origin of photoluminescence from Si nanocrystals
- (2008) S. Godefroo et al. Nature Nanotechnology
- Nanoscopic recombination processes in InGaN/GaN quantum wells emitting violet, blue, and green spectra
- (2008) A. Kaneta et al. PHYSICAL REVIEW B
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