Stochastic circuit breaker network model for bipolar resistance switching memories

Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabrication

(2017) Hong-Yu Chen et al.   JOURNAL OF ELECTROCERAMICS

Role of Al doping in the filament disruption in HfO2 resistance switches

(2017) Stefano Brivio et al.   NANOTECHNOLOGY

Experimental study of gradual/abrupt dynamics of HfO2-based memristive devices

(2016) S. Brivio et al.   APPLIED PHYSICS LETTERS

HfO2-Based RRAM: Electrode Effects, Ti/HfO2 Interface, Charge Injection, and Oxygen (O) Defects Diffusion Through Experiment and Ab Initio Calculations

(2016) Boubacar Traore et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Physical Unbiased Generation of Random Numbers With Coupled Resistive Switching Devices

(2016) Simone Balatti et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A memristor random circuit breaker model accounting for stimulus thermal accumulation

(2016) Jinling Xing et al.   IEICE Electronics Express

Improved reset breakdown strength in a HfOx-based resistive memory by introducing RuOx oxygen diffusion barrier

(2016) Jaesung Park et al.   AIP Advances

Analog Memristive Synapse in Spiking Networks Implementing Unsupervised Learning

(2016) Erika Covi et al.   Frontiers in Neuroscience

Resistive Switching in High-Density Nanodevices Fabricated by Block Copolymer Self-Assembly

(2015) Jacopo Frascaroli et al.   ACS Nano

Physics of the Switching Kinetics in Resistive Memories

(2015) Stephan Menzel et al.   ADVANCED FUNCTIONAL MATERIALS

Role of metal-oxide interfaces in the multiple resistance switching regimes of Pt/HfO2/TiN devices

(2015) S. Brivio et al.   APPLIED PHYSICS LETTERS

Microscopic Modeling of HfOx RRAM Operations: From Forming to Switching

(2015) Andrea Padovani et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

HfO2-Based OxRAM Devices as Synapses for Convolutional Neural Networks

(2015) Daniele Garbin et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Compact Modeling of RRAM Devices and Its Applications in 1T1R and 1S1R Array Design

(2015) Pai-Yu Chen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Effect of Al doping on the retention behavior of HfO2 resistive switching memories

(2015) Jacopo Frascaroli et al.   MICROELECTRONIC ENGINEERING

Causes and consequences of the stochastic aspect of filamentary RRAM

(2015) R. Degraeve et al.   MICROELECTRONIC ENGINEERING

Experimental Demonstration of a Second-Order Memristor and Its Ability to Biorealistically Implement Synaptic Plasticity

(2015) Sungho Kim et al.   NANO LETTERS

Training and operation of an integrated neuromorphic network based on metal-oxide memristors

(2015) M. Prezioso et al.   NATURE

Investigation of the synaptic device based on the resistive switching behavior in hafnium oxide

(2015) Bin Gao et al.   Progress in Natural Science-Materials International

Conductive-bridging random access memory: challenges and opportunity for 3D architecture

(2015) Debanjan Jana et al.   Nanoscale Research Letters

Investigation of the synaptic device based on the resistive switching behavior in hafnium oxide

(2015) Bin Gao et al.   Progress in Natural Science-Materials International

Dual random circuit breaker network model with equivalent thermal circuit network

(2014) Kwanyong Kim et al.   Applied Physics Express

Analytical Modeling of Oxide-Based Bipolar Resistive Memories and Complementary Resistive Switches

(2014)   IEEE TRANSACTIONS ON ELECTRON DEVICES

Formation and disruption of conductive filaments in a HfO2/TiN structure

(2014) S Brivio et al.   NANOTECHNOLOGY

A compound memristive synapse model for statistical learning through STDP in spiking neural networks

(2014) Johannes Bill et al.   Frontiers in Neuroscience

A Physics-Based Compact Model of Metal-Oxide-Based RRAM DC and AC Operations

(2013) Peng Huang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Integration of nanoscale memristor synapses in neuromorphic computing architectures

(2013) Giacomo Indiveri et al.   NANOTECHNOLOGY

A Monte Carlo study of the low resistance state retention of HfOx based resistive switching memory

(2012) Shimeng Yu et al.   APPLIED PHYSICS LETTERS

Low-power resistive switching in Au/NiO/Au nanowire arrays

(2012) S. Brivio et al.   APPLIED PHYSICS LETTERS

Metal–Oxide RRAM

(2012) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

Emerging memories: resistive switching mechanisms and current status

(2012) Doo Seok Jeong et al.   REPORTS ON PROGRESS IN PHYSICS

Resistance switching memories are memristors

(2011) Leon Chua   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Interface-modified random circuit breaker network model applicable to both bipolar and unipolar resistance switching

(2011) S. B. Lee et al.   APPLIED PHYSICS LETTERS

Crossbar Logic Using Bipolar and Complementary Resistive Switches

(2011) R. Rosezin et al.   IEEE ELECTRON DEVICE LETTERS

Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth

(2011) Daniele Ielmini   IEEE TRANSACTIONS ON ELECTRON DEVICES

Study of defects in an electroresistive Au/La2/3Sr1/3MnO3/SrTiO3(001) heterostructure by positron annihilation

(2011) R. Ferragut et al.   JOURNAL OF APPLIED PHYSICS

Metal oxide resistive memory switching mechanism based on conductive filament properties

(2011) G. Bersuker et al.   JOURNAL OF APPLIED PHYSICS

Ionic doping effect in ZrO2 resistive switching memory

(2010) Haowei Zhang et al.   APPLIED PHYSICS LETTERS

‘Memristive’ switches enable ‘stateful’ logic operations via material implication

(2010) Julien Borghetti et al.   NATURE

Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Occurrence of Both Unipolar Memory and Threshold Resistance Switching in a NiO Film

(2009) S. H. Chang et al.   PHYSICAL REVIEW LETTERS

Random Circuit Breaker Network Model for Unipolar Resistance Switching

(2008) Seung Chul Chae et al.   ADVANCED MATERIALS

Abnormal resistance switching behaviours of NiO thin films: possible occurrence of both formation and rupturing of conducting channels

(2008) Chunli Liu et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Resistance switching in amorphous and crystalline binary oxides grown by electron beam evaporation and atomic layer deposition

(2008) S. Spiga et al.   MICROELECTRONIC ENGINEERING