Conduction mechanism of a TaOx-based selector and its application in crossbar memory arrays
出版年份 2015 全文链接
标题
Conduction mechanism of a TaOx-based selector and its application in crossbar memory arrays
作者
关键词
-
出版物
Nanoscale
Volume 7, Issue 11, Pages 4964-4970
出版商
Royal Society of Chemistry (RSC)
发表日期
2015-02-06
DOI
10.1039/c4nr06922f
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Crossbar RRAM Arrays: Selector Device Requirements During Read Operation
- (2014) Jiantao Zhou et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Crossbar RRAM Arrays: Selector Device Requirements During Write Operation
- (2014) Sungho Kim et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Homogeneous barrier modulation of TaOx/TiO2 bilayers for ultra-high endurance three-dimensional storage-class memory
- (2014) Chung-Wei Hsu et al. NANOTECHNOLOGY
- Thermally activated non-linearity of device in resistance-switching memory for cross-point array applications
- (2013) Jiyong Woo et al. APPLIED PHYSICS LETTERS
- Oxide Heterostructure Resistive Memory
- (2013) Yuchao Yang et al. NANO LETTERS
- Nanoscale resistive switching devices: mechanisms and modeling
- (2013) Yuchao Yang et al. Nanoscale
- Bipolar one diode–one resistor integration for high-density resistive memory applications
- (2013) Yingtao Li et al. Nanoscale
- High Current Density and Nonlinearity Combination of Selection Device Based on TaOx/TiO2/TaOx Structure for One Selector–One Resistor Arrays
- (2012) Wootae Lee et al. ACS Nano
- Investigation of One-Dimensional Thickness Scaling on $ \hbox{Cu/HfO}_{x}/\hbox{Pt}$ Resistive Switching Device Performance
- (2012) Ming Wang et al. IEEE ELECTRON DEVICE LETTERS
- TiO2-based metal-insulator-metal selection device for bipolar resistive random access memory cross-point application
- (2011) Jungho Shin et al. JOURNAL OF APPLIED PHYSICS
- A Functional Hybrid Memristor Crossbar-Array/CMOS System for Data Storage and Neuromorphic Applications
- (2011) Kuk-Hwan Kim et al. NANO LETTERS
- Diode-less bilayer oxide (WOx–NbOx) device for cross-point resistive memory applications
- (2011) Xinjun Liu et al. NANOTECHNOLOGY
- Transition of stable rectification to resistive-switching in Ti/TiO2/Pt oxide diode
- (2010) Jiun-Jia Huang et al. APPLIED PHYSICS LETTERS
- Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
- (2009) Rainer Waser et al. ADVANCED MATERIALS
- Memristive switching mechanism for metal/oxide/metal nanodevices
- (2008) J. Joshua Yang et al. Nature Nanotechnology
Publish scientific posters with Peeref
Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.
Learn MoreBecome a Peeref-certified reviewer
The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.
Get Started