Uniting Gradual and Abrupt set Processes in Resistive Switching Oxides

Physics of the Switching Kinetics in Resistive Memories

(2015) Stephan Menzel et al.   ADVANCED FUNCTIONAL MATERIALS

Effect of RESET Voltage on Distribution of SET Switching Time of Bipolar Resistive Switching in a Tantalum Oxide Thin Film

(2015) Yoshifumi Nishi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Dependence of the SET switching variability on the initial state in HfO x -based ReRAM

(2015) Camilla La Torre et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Investigation of the synaptic device based on the resistive switching behavior in hafnium oxide

(2015) Bin Gao et al.   Progress in Natural Science-Materials International

Investigation of the synaptic device based on the resistive switching behavior in hafnium oxide

(2015) Bin Gao et al.   Progress in Natural Science-Materials International

Nanoionic Resistive Switching Memories: On the Physical Nature of the Dynamic Reset Process

(2015) Astrid Marchewka et al.   Advanced Electronic Materials

Electronic Instabilities Leading to Electroformation of Binary Metal Oxide-based Resistive Switches

(2014) Abhishek A. Sharma et al.   ADVANCED FUNCTIONAL MATERIALS

Mechanism of localized electrical conduction at the onset of electroforming in TiO2 based resistive switching devices

(2014) Mohammad Noman et al.   APPLIED PHYSICS LETTERS

Origin of the SET Kinetics of the Resistive Switching in Tantalum Oxide Thin Films

(2014) Yoshifumi Nishi et al.   IEEE ELECTRON DEVICE LETTERS

Interrelation of Sweep and Pulse Analysis of the SET Process in SrTiO3 Resistive Switching Memories

(2014) Karsten Fleck et al.   IEEE ELECTRON DEVICE LETTERS

Analysis of the Voltage–Time Dilemma of Metal Oxide-Based RRAM and Solution Exploration of High Speed and Low Voltage AC Switching

(2014) Peng Huang et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices

(2014) N. Aslam et al.   JOURNAL OF APPLIED PHYSICS

Memristive devices in computing system

(2013) J. Joshua Yang et al.   ACM Journal on Emerging Technologies in Computing Systems

Transient characterization of the electroforming process in TiO2 based resistive switching devices

(2013) Mohammad Noman et al.   APPLIED PHYSICS LETTERS

Scaled X-bar TiN/HfO2/TiN RRAM cells processed with optimized plasma enhanced atomic layer deposition (PEALD) for TiN electrode

(2013) Y.Y. Chen et al.   MICROELECTRONIC ENGINEERING

An associative capacitive network based on nanoscale complementary resistive switches for memory-intensive computing

(2013) Omid Kavehei et al.   Nanoscale

Crystallization Study by Transmission Electron Microscopy of SrTiO3Thin Films Prepared by Plasma-Assisted ALD

(2013) V. Longo et al.   ECS Journal of Solid State Science and Technology

Nonlinear dependence of set time on pulse voltage caused by thermal accelerated breakdown in the Ti/HfO2/Pt resistive switching devices

(2012) M. G. Cao et al.   APPLIED PHYSICS LETTERS

Evidence for Voltage-Driven Set/Reset Processes in Bipolar Switching RRAM

(2012) Daniele Ielmini et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study

(2012) Federico Nardi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

High precision tuning of state for memristive devices by adaptable variation-tolerant algorithm

(2012) Fabien Alibart et al.   NANOTECHNOLOGY

Memristive devices for computing

(2012) J. Joshua Yang et al.   Nature Nanotechnology

Scaling Potential of Local Redox Processes in Memristive SrTiO $_{3}$ Thin-Film Devices

(2012) Regina Dittmann et al.   PROCEEDINGS OF THE IEEE

Metal–Oxide RRAM

(2012) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

Study of resistive random access memory based on TiN/TaOx/TiN integrated into a 65nm advanced complementary metal oxide semiconductor technology

(2012) Therese Diokh et al.   THIN SOLID FILMS

Origin of the Ultra-nonlinear Switching Kinetics in Oxide-Based Resistive Switches

(2011) Stephan Menzel et al.   ADVANCED FUNCTIONAL MATERIALS

Investigating the switching dynamics and multilevel capability of bipolar metal oxide resistive switching memory

(2011) Shimeng Yu et al.   APPLIED PHYSICS LETTERS

Sub-nanosecond switching of a tantalum oxide memristor

(2011) Antonio C Torrezan et al.   NANOTECHNOLOGY

Voltage-time dilemma of pure electronic mechanisms in resistive switching memory cells

(2010) Herbert Schroeder et al.   JOURNAL OF APPLIED PHYSICS

‘Memristive’ switches enable ‘stateful’ logic operations via material implication

(2010) Julien Borghetti et al.   NATURE

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Resistive Random Access Memory (ReRAM) Based on Metal Oxides

(2010) Hiroyuki Akinaga et al.   PROCEEDINGS OF THE IEEE

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Switching dynamics in titanium dioxide memristive devices

(2009) Matthew D. Pickett et al.   JOURNAL OF APPLIED PHYSICS